6HP04CH-TL-W
MOSFET P-CH 60V 370MA 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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This onsemi P-Channel MOSFET, part number 6HP04CH-TL-W, features a drain-to-source voltage of 60V and a continuous drain current of 370mA at 25°C (Ta). The device has a maximum on-resistance (Rds On) of 4.2 Ohms at 190mA with a 10V gate-source voltage. It is supplied in a 3-CPH package suitable for surface mount applications and operates within a temperature range of -55°C to 150°C (TJ). Key parameters include a gate charge of 0.84 nC and an input capacitance of 24.1 pF. This component is utilized in various electronic systems across industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 370mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 190mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 3-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 24.1 pF @ 20 V |