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5LP01C-TB-H

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5LP01C-TB-H

MOSFET P-CH 50V 70MA 3CP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi 5LP01C-TB-H is a P-Channel MOSFET designed for various electronic applications. This component features a Drain-to-Source Voltage (Vdss) of 50V and a continuous drain current capability of 70mA at 25°C. The Rds On (Max) is specified at 23 Ohms at an Id of 40mA and Vgs of 4V. The device offers a maximum power dissipation of 250mW (Ta) and operates at junction temperatures up to 150°C. It is housed in a TO-236-3, SC-59, SOT-23-3 package, identified as SC-59-3/CP3, and is supplied in Tape & Reel packaging. Key parameters include a Gate Charge (Qg) of 1.4 nC @ 10V and an Input Capacitance (Ciss) of 7.4 pF @ 10V. This MOSFET is suitable for use in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C70mA (Ta)
Rds On (Max) @ Id, Vgs23Ohm @ 40mA, 4V
FET Feature-
Power Dissipation (Max)250mW (Ta)
Vgs(th) (Max) @ Id-
Supplier Device PackageSC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7.4 pF @ 10 V

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