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5LN01SP-AC

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5LN01SP-AC

MOSFET N-CH 50V 100MA 3SPA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi 5LN01SP-AC is an N-Channel MOSFET designed for applications requiring efficient switching. This component features a Drain-to-Source Voltage (Vdss) of 50 V and a continuous Drain Current (Id) of 100 mA at 25°C. The Rds On is specified at a maximum of 7.8 Ohms at 50 mA, 4 V. Key parameters include a Gate Charge (Qg) of 1.57 nC maximum at 10 V and Input Capacitance (Ciss) of 6.6 pF maximum at 10 V. The device operates with a Gate-Source Voltage (Vgs) range of ±10 V and a threshold voltage (Vgs(th)) of 1.3 V maximum at 100 µA. Power dissipation is rated at 250 mW (Ta) with a maximum junction temperature of 150°C. It is supplied in a 3-SPA package, specifically SC-72, and is available on tape and reel. This MOSFET is suitable for use in various industrial and consumer electronics applications.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-72
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Rds On (Max) @ Id, Vgs7.8Ohm @ 50mA, 4V
FET Feature-
Power Dissipation (Max)250mW (Ta)
Vgs(th) (Max) @ Id1.3V @ 100µA
Supplier Device Package3-SPA
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6.6 pF @ 10 V

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