5LN01SP
MOSFET N-CH 50V 100MA 3SPAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel MOSFET, part number 5LN01SP, is designed for applications requiring precise power control. This component offers a Drain-to-Source Voltage (Vdss) of 50V and a continuous drain current (Id) of 100mA at 25°C, with a maximum power dissipation of 250mW. The Rds On is specified at 7.8 Ohms maximum for an Id of 50mA and Vgs of 4V, with drive voltages ranging from 1.5V to 4V. Key parameters include a gate charge (Qg) of 1.57 nC maximum and input capacitance (Ciss) of 6.6 pF maximum, both measured at 10V. The device operates within an extended temperature range up to 150°C (TJ). This MOSFET is housed in a 3-SPA (SC-72) through-hole package, commonly utilized in industrial control, consumer electronics, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | SC-72 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 7.8Ohm @ 50mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 100µA |
| Supplier Device Package | 3-SPA |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6.6 pF @ 10 V |
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