5LN01S-TL-E
MOSFET N-CH 50V 100MA SMCPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 5LN01S-TL-E is a 50V N-Channel MOSFET in an SMCP package. This device offers a continuous drain current of 100mA at 25°C with a maximum power dissipation of 150mW. Key electrical characteristics include a drain-to-source voltage (Vdss) of 50V, a maximum on-resistance (Rds On) of 7.8 Ohms at 50mA and 4V, and a gate charge (Qg) of 1.57 nC maximum at 10V. Input capacitance (Ciss) is 6.6 pF maximum at 10V. The device supports drive voltages from 1.5V to 4V and has a maximum gate-source voltage (Vgs) of ±10V. Operating temperature ranges up to 150°C (TJ). This MOSFET is suitable for applications in consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 7.8Ohm @ 50mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SMCP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6.6 pF @ 10 V |
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