5LN01M-TL-E
MOSFET N-CH 50V 100MA 3MCPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 5LN01M-TL-E is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 50 V and a continuous drain current (Id) capability of 100mA at 25°C. With a maximum Rds On of 7.8 Ohms at 50mA and 4V, it offers efficient switching characteristics. The device has a specified maximum gate charge (Qg) of 1.57 nC and an input capacitance (Ciss) of 6.6 pF, both measured at 10V. The 5LN01M-TL-E is packaged in an SC-70, SOT-323 (MCP) format and is supplied on tape and reel. Its maximum power dissipation is 150mW (Ta), and it operates in an ambient temperature range up to 150°C. This MOSFET is suitable for use in various electronic systems, including consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 7.8Ohm @ 50mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | MCP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6.6 pF @ 10 V |
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