5LN01C-TB-E
MOSFET N-CH 50V 100MA 3CPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi 5LN01C-TB-E is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 100mA at 25°C. The device offers a maximum Rds On of 7.8 Ohms at 50mA and 4V. Key parameters include a Gate Charge (Qg) of 1.57 nC (max) at 10V and an Input Capacitance (Ciss) of 6.6 pF (max) at 10V. The power dissipation is rated at 250mW (Ta). Operating temperature ranges up to 150°C (TJ). Packaged in a TO-236-3, SC-59, SOT-23-3 (SC-59-3/CP3) and supplied on Tape & Reel (TR), this MOSFET is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 7.8Ohm @ 50mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SC-59-3/CP3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6.6 pF @ 10 V |