5HN01M-TL-E
MOSFET N-CH 50V 100MA 3MCPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 5HN01M-TL-E is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 50V and a continuous drain current (Id) of 100mA at 25°C. The Rds On is specified at a maximum of 7.5 Ohms when driven at 50mA and 10V. Key parameters include a Gate Charge (Qg) of 1.4 nC and an Input Capacitance (Ciss) of 6.2 pF, both measured at 10V. The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 150mW (Ta). Supplied in a Tape & Reel (TR) package, the 5HN01M-TL-E utilizes a SC-70, SOT-323 footprint. This MOSFET is suitable for use in various electronic systems, including power management and signal switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | MCP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6.2 pF @ 10 V |
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