3LP01SS-TL-E
MOSFET P-CH 30V 100MA 3SSFPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi P-Channel MOSFET, part number 3LP01SS-TL-E, features a 30V drain-source breakdown voltage and a continuous drain current of 100mA at 25°C. This MOSFET offers a low on-resistance of 10.4 Ohms maximum at 50mA and 4V gate-source voltage. The device is housed in a compact 3-SSFP package for surface mounting, with a maximum power dissipation of 150mW. Key electrical characteristics include a gate charge of 1.43 nC maximum and an input capacitance of 7.5 pF maximum. The operating temperature range extends to 150°C. This component finds application in power management and general-purpose switching within the consumer electronics and industrial automation sectors. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-81 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 10.4Ohm @ 50mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 3-SSFP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7.5 pF @ 10 V |