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3LP01S-TL-E

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3LP01S-TL-E

MOSFET P-CH 30V 100MA SMCP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi 3LP01S-TL-E is a P-Channel MOSFET designed for surface mount applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 100mA at 25°C. With a maximum Rds On of 10.4 Ohms at 50mA and 4V, it offers efficient switching characteristics. The device operates at temperatures up to 150°C (TJ) and has a power dissipation of 150mW (Ta). Key parameters include a gate charge (Qg) of 1.43 nC (max) at 10V and an input capacitance (Ciss) of 7.5 pF (max) at 10V. The 3LP01S-TL-E is supplied in a Tape & Reel package for automated assembly, commonly utilized in consumer electronics and industrial automation. The supplier device package is identified as SMCP, corresponding to the SC-75, SOT-416 package.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Rds On (Max) @ Id, Vgs10.4Ohm @ 50mA, 4V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Vgs(th) (Max) @ Id-
Supplier Device PackageSMCP
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs1.43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7.5 pF @ 10 V

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