3LP01M-TL-E
MOSFET P-CH 30V 100MA 3MCPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 3LP01M-TL-E is a P-Channel MOSFET designed for surface mount applications. This component offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 100mA at 25°C ambient. With a maximum power dissipation of 150mW (Ta), it is suitable for applications requiring moderate power handling. The device exhibits a typical Rds On of 10.4 Ohms at 50mA and 4V Vgs. Key electrical parameters include a gate charge (Qg) of 1.43nC and input capacitance (Ciss) of 7.5pF, both specified at 10V. The 3LP01M-TL-E is rated for operation up to 150°C junction temperature and is supplied in an MCP package (SC-70, SOT-323) on tape and reel. This MOSFET is utilized across various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 10.4Ohm @ 50mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | MCP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7.5 pF @ 10 V |
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