3LP01C-TB-H
MOSFET P-CH 30V 100MA 3CPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 3LP01C-TB-H is a P-Channel MOSFET designed for various applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 100 mA at 25°C. The device offers a maximum power dissipation of 250 mW (Ta) and a low On-Resistance (Rds On) of 10.4 Ohms at 50 mA and 4 V gate-source voltage. With a gate charge of 1.43 nC (max) at 10 V and input capacitance (Ciss) of 7.5 pF (max) at 10 V, it is suitable for switching and amplification circuits. The 3LP01C-TB-H is housed in an SC-59-3/CP3 (TO-236-3) surface mount package and is supplied on a tape and reel. This component finds application in consumer electronics and industrial equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 10.4Ohm @ 50mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SC-59-3/CP3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7.5 pF @ 10 V |
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