3LP01C-TB-E
MOSFET P-CH 30V 100MA 3CPManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi P-Channel MOSFET, part number 3LP01C-TB-E, offers a 30V drain-source voltage with a continuous drain current capability of 100mA at 25°C. This device features a maximum on-resistance of 10.4 Ohm at 50mA and 4V Vgs. The 3LP01C-TB-E is housed in an SC-59-3/CP3 (TO-236-3, SC-59, SOT-23-3) surface mount package, supplied in Tape & Reel. It operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge of 1.43 nC at 10V Vgs and an input capacitance of 7.5 pF at 10V Vds. This component is suitable for various applications including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 10.4Ohm @ 50mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SC-59-3/CP3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7.5 pF @ 10 V |
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