3LN01SS-TL-E
MOSFET N-CH 30V 150MA SC81Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel MOSFET, part number 3LN01SS-TL-E, offers a 30V drain-source breakdown voltage and a continuous drain current of 150mA at 25°C. This surface mount component, packaged in a 3-SSFP (SC-81), features a maximum power dissipation of 150mW (Ta). Key electrical characteristics include a quiescent drain-source on-resistance (Rds(on)) of 3.7 Ohms maximum at 80mA and 4V gate-source voltage, with a gate charge of 1.58 nC maximum at 10V. Input capacitance (Ciss) is 7 pF maximum at 10V. The device operates within a temperature range of 150°C (TJ). This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-81 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 80mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 3-SSFP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7 pF @ 10 V |
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