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3LN01S-TL-E

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3LN01S-TL-E

MOSFET N-CH 30V 150MA SMCP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi 3LN01S-TL-E is an N-Channel MOSFET designed for surface mount applications. This component features a 30V drain-source voltage and a continuous drain current of 150mA at 25°C, with a maximum power dissipation of 150mW. Key electrical parameters include a maximum on-resistance (Rds On) of 3.7 Ohms at 80mA and 4V Vgs, and a gate charge (Qg) of 1.58 nC at 10V Vgs. The input capacitance (Ciss) is a maximum of 7pF at 10V Vds. This device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in a TO-236-3, SC-59, SOT-23-3 (SMCP) package, presented in tape and reel. Its characteristics make it suitable for use in portable electronics and general-purpose switching applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Rds On (Max) @ Id, Vgs3.7Ohm @ 80mA, 4V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Vgs(th) (Max) @ Id-
Supplier Device PackageSMCP
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7 pF @ 10 V

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