3LN01M-TL-H
MOSFET N-CH 30V 150MA SC70/MCPH3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel MOSFET, part number 3LN01M-TL-H, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 150mA at 25°C ambient. This device features a low on-resistance of 3.7 Ohms maximum at 80mA drain current and 4V gate-source voltage. The 3LN01M-TL-H is housed in a compact SC-70 (SOT-323) surface-mount package, supplied on tape and reel. Key parameters include a maximum power dissipation of 150mW (Ta) and a maximum junction temperature of 150°C. The specified gate drive voltages for optimal performance range from 1.5V to 4V. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 80mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SC-70 / MCP3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7 pF @ 10 V |