3LN01M-TL-E
MOSFET N-CH 30V 150MA SC70/MCPH3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel MOSFET (3LN01M-TL-E) is designed for applications requiring efficient switching. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 150mA at 25°C. The Rds On is specified at a maximum of 3.7 Ohms with an 80mA drain current and 4V gate-source voltage. Key capacitance parameters include an input capacitance (Ciss) of 7pF and a gate charge (Qg) of 1.58nC, both measured at 10V. The device operates with a gate-source voltage range of ±10V and a threshold voltage (Vgs(th)) of 1.3V at 100µA. With a maximum power dissipation of 150mW, it is suitable for operation up to 150°C (TJ). The 3LN01M-TL-E is housed in an SC-70 / MCP3 surface mount package, supplied on tape and reel. This MOSFET finds application in various electronic systems, including consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 80mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 100µA |
| Supplier Device Package | SC-70 / MCP3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7 pF @ 10 V |
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