3LN01C-TB-H
MOSFET N-CH 30V 150MA 3CPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 3LN01C-TB-H is a 30V N-Channel MOSFET designed for surface mount applications. This component features a continuous drain current of 150mA (Ta) at 25°C and a maximum power dissipation of 250mW (Ta). The Rds On is specified at 3.7 Ohms maximum at 80mA and 4V. Key parameters include a gate charge of 1.58 nC maximum at 10V and an input capacitance (Ciss) of 7 pF maximum at 10V. The device operates within an ambient temperature range up to 150°C (TJ) and utilizes SC-59-3/CP3 packaging, supplied on tape and reel. This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 80mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SC-59-3/CP3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7 pF @ 10 V |
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