3LN01C-TB-E
MOSFET N-CH 30V 150MA 3CPManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi 3LN01C-TB-E is an N-Channel MOSFET designed for applications requiring efficient switching. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 150mA at 25°C, with a maximum power dissipation of 250mW (Ta). The Rds On is specified at 3.7 Ohms maximum at 80mA and 4V gate-source voltage, with a typical gate charge of 1.58 nC. The device operates over an extended temperature range up to 150°C (TJ) and is housed in a compact SC-59-3/CP3 surface mount package, supplied on tape and reel. This MOSFET is suitable for use in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 80mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SC-59-3/CP3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7 pF @ 10 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
