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2SK669-AC

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2SK669-AC

MOSFET N-CH 50V 100MA 3SPA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel MOSFET, part number 2SK669-AC. This component features a 50V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 100mA at 25°C. The device offers a maximum on-resistance (Rds On) of 20Ohm when driven at 10mA with a 10V gate-source voltage (Vgs). With a power dissipation of 200mW (Ta) and an operating temperature up to 125°C (TJ), it is suitable for applications requiring efficient switching. The input capacitance (Ciss) is a maximum of 15 pF at 10V. This MOSFET is housed in a 3-SPA package, designed for through-hole mounting. Its specifications make it a viable option for various industrial and consumer electronics applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDatasheet:
Technical Details:
PackagingBox
Package / Case3-SIP
Mounting TypeThrough Hole
Operating Temperature125°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Rds On (Max) @ Id, Vgs20Ohm @ 10mA, 10V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Vgs(th) (Max) @ Id-
Supplier Device Package3-SPA
Drain to Source Voltage (Vdss)50 V
Input Capacitance (Ciss) (Max) @ Vds15 pF @ 10 V

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