2SK4222
MOSFET N-CH 600V 23A TO3PBManufacturer: onsemi
Categories: Single FETs, MOSFETs
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This onsemi N-Channel MOSFET, part number 2SK4222, is designed for high-voltage applications. It features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) rating of 23A at 25°C ambient. The device offers a maximum on-resistance (Rds On) of 340mOhm at 11.5A and 10V gate-source voltage. With a maximum junction temperature of 150°C and a power dissipation of 2.5W (ambient) or 220W (case), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 81 nC at 10V and input capacitance (Ciss) of 2250 pF at 30V. The 2SK4222 utilizes a through-hole TO-3PB package, commonly found in power supply, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 220W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3PB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 30 V |
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