2SK4221
MOSFET N-CH 500V 26A TO3PBManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi 2SK4221 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 26A at 25°C (Ta). With a low On-Resistance (Rds On) of 240mOhm at 13A and 10V Vgs, it offers efficient power handling. The device is packaged in a TO-3PB (TO-3P-3, SC-65-3) through-hole configuration, supporting a maximum junction temperature of 150°C. Key parameters include a Gate Charge (Qg) of 87 nC at 10V and an input capacitance (Ciss) of 2250 pF at 30V Vds. Power dissipation capabilities are rated at 2.5W (Ta) and 220W (Tc). This MOSFET is suitable for use in power supply, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 220W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3PB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 30 V |
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