2SK4210
MOSFET N-CH 900V 10A TO3PBManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi 2SK4210 N-Channel MOSFET, TO-3PB package. This device features a 900V drain-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Ta). The on-resistance (Rds On) is specified at a maximum of 1.3 Ohm at 5A and 10V Vgs. Key parameters include input capacitance (Ciss) up to 1500pF at 30V and gate charge (Qg) up to 75nC at 10V. Power dissipation is rated at 2.5W (Ta) and 190W (Tc). Operating temperature range extends to 150°C (TJ). This component is suitable for applications in high-voltage power conversion and switching, commonly found in industrial power supplies and lighting solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 190W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3PB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 30 V |
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