2SK4209
MOSFET N-CH 800V 12A TO3PBManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK4209 is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 800V and a continuous Drain current (Id) of 12A at 25°C. The device offers a maximum on-resistance (Rds On) of 1.08 Ohms at 6A and 10V gate-source voltage. With a gate charge (Qg) of 75 nC at 10V and an input capacitance (Ciss) of 1500 pF at 30V, it is suitable for power switching applications. The 2SK4209 is housed in a TO-3PB package for through-hole mounting and can operate at junction temperatures up to 150°C. Power dissipation is rated at 2.5W (Ta) and 190W (Tc). This MOSFET is commonly utilized in power supply units, lighting control, and motor drive circuits across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.08Ohm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-3PB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 30 V |