2SK4198FS
MOSFET N-CH 600V 4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK4198FS is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 4A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 2.34 Ohms at 2.5A and 10V, it offers efficient switching characteristics. The device's power dissipation capability is rated at 2W (Ta) and 30W (Tc). Key parameters include a Gate Charge (Qg) of 14.3 nC and an Input Capacitance (Ciss) of 360 pF. This TO-220-3 packaged MOSFET is suitable for use in power supply units, lighting control, and industrial power conversion systems. It operates within a junction temperature range of 150°C (TJ) and has a maximum Gate-Source Voltage (Vgs) of ±30V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.34Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 30 V |
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