2SK4197FS
MOSFET N-CH 600V 3.3A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel MOSFET, part number 2SK4197FS, is engineered for demanding applications requiring high voltage and efficient switching. This TO-220-3 packaged device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 3.3A at 25°C (Tc). With a low on-resistance of 3.25 Ohms at 1.8A and 10V Vgs, it offers excellent conduction efficiency. The device boasts a gate charge (Qg) of 11 nC at 10V and input capacitance (Ciss) of 260 pF at 30V, facilitating fast switching performance. Maximum power dissipation is rated at 2W (Ta) and 28W (Tc), with an operating junction temperature of 150°C. This component is suitable for use in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.25Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 30 V |
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