2SK4177-E
MOSFET N-CH 1500V 2A SMP-FDManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi 2SK4177-E is an N-Channel MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 1500 V and a continuous Drain current (Id) of 2A at 25°C. The Rds On is specified at a maximum of 13 Ohms at 1A with a 10V gate drive. Key parameters include a Gate Charge (Qg) of 37.5 nC at 10V and an input capacitance (Ciss) of 380 pF at 30V. With a maximum power dissipation of 80W (Tc), it operates at junction temperatures up to 150°C. The 2SK4177-E is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package, suitable for surface mounting. This device is utilized in power supply units, industrial automation, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 13Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | SMP-FD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1500 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 30 V |