2SK4177-DL-E
MOSFET N-CH 1500V 2A SMP-FDManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel Power MOSFET 2SK4177-DL-E offers a 1500 V breakdown voltage and 2 A continuous drain current. This device features a low Rds(on) of 13 Ohms maximum at 1 A, 10 V, and a gate charge of 37.5 nC maximum at 10 V. The input capacitance (Ciss) is 380 pF maximum at 30 V. Designed for surface mounting in the compact SMP-FD (TO-263-3, D2PAK) package, it dissipates up to 80 W at 25°C (Tc). The operating temperature range is up to 150°C (TJ) with a maximum gate-source voltage of ±20 V. This component is suitable for applications in high-voltage power conversion and switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 13Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SMP-FD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1500 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 30 V |
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