2SK4177-DL-1E
MOSFET N-CH 1500V 2A TO263-2Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel MOSFET, part number 2SK4177-DL-1E, offers a 1500V drain-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C. This surface mount device, packaged in a TO-263-2 (D2PAK) configuration, provides a maximum power dissipation of 80W. Key parameters include a gate charge (Qg) of 37.5 nC at 10V and input capacitance (Ciss) of 380 pF at 30V. The on-resistance (Rds On) is specified at a maximum of 13 Ohms when Id is 1A and Vgs is 10V. It operates at a maximum junction temperature of 150°C. This component finds application in power supply, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 13Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1500 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 30 V |
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