2SK4126
MOSFET N-CH 650V 15A TO3PBManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel MOSFET, part number 2SK4126, is designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 15A at 25°C (Ta). The on-resistance (Rds On) is a maximum of 720mOhm at 6A and 10V gate drive. With a gate charge (Qg) of 45.4 nC at 10V and input capacitance (Ciss) of 1200 pF at 30V, it offers efficient switching characteristics. The power dissipation is rated at 2.5W (Ta) and 170W (Tc). Housed in a TO-3PB (TO-3P-3, SC-65-3) package, this through-hole component operates at temperatures up to 150°C (TJ). It is suitable for use in power supply, motor control, and industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 720mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3PB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 30 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
2SK4088LS-1E
MOSFET N-CH 650V 7.5A TO220F-3FS
NTMFS4C028NT3G
MOSFET N-CH 30V 16.4A/52A 5DFN
