2SK4125-1EX
MOSFET N-CH 600V 17A TO3P-3LManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel MOSFET, part number 2SK4125-1EX, offers a Vds of 600 V and a continuous drain current (Id) of 17A at 25°C. This through-hole component features a TO-3P-3L package and a maximum power dissipation of 170W (Tc). Key electrical characteristics include a maximum Rds On of 610mOhm at 7A, 10V, and a gate charge (Qg) of 46 nC at 10V. Input capacitance (Ciss) is rated at 1200 pF at 30V. The 2SK4125-1EX is suitable for applications in power supply units and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TA) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 610mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3P-3L |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 30 V |
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