2SK4125-1E
MOSFET N-CH 600V 17A TO3P-3LManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi 2SK4125-1E is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 600V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C. With a maximum on-resistance (Rds On) of 610mOhm at 7A and 10V, it offers efficient power handling. The device boasts a high junction operating temperature of 150°C and a power dissipation of 2.5W (Ta) / 170W (Tc). Key parameters include a gate charge (Qg) of 46 nC at 10V and input capacitance (Ciss) of 1200 pF at 30V. Encased in a TO-3P-3L package, this MOSFET is suitable for use in power supply, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 610mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3P-3L |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 30 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
FDP4D5N10C
MOSFET N-CH 100V 128A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
