2SK4124-1E
MOSFET N-CH 500V 20A TO3P-3LManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK4124-1E is a N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 20 A at 25°C (Ta). With a low on-resistance (Rds On) of 430mOhm at 8A and 10V, it offers efficient power switching. The device is housed in a TO-3P-3L package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 46.6 nC at 10 V and an input capacitance (Ciss) of 1200 pF at 30 V. The maximum power dissipation is 2.5 W (Ta) and 170 W (Tc), with an operating junction temperature of 150°C. This MOSFET is utilized in power supply, industrial automation, and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3P-3L |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 46.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 30 V |
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