2SK4124
MOSFET N-CH 500V 20A TO3PBManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's 2SK4124 is an N-Channel MOSFET designed for high-voltage applications. Featuring a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) capability of 20A at 25°C, this component is housed in a TO-3PB package. The device exhibits a maximum On-Resistance (Rds On) of 430mOhm at 8A and 10V Vgs. Key parameters include a gate charge (Qg) of 46.6 nC (max) at 10V and an input capacitance (Ciss) of 1200 pF (max) at 30V. Power dissipation is rated at 2.5W (Ta) and 170W (Tc). The 2SK4124 is suitable for power supply, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3PB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 46.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 30 V |
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