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2SK4099LS-1E

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2SK4099LS-1E

MOSFET N-CH 600V 6.9A TO220F-3FS

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi 2SK4099LS-1E is a high-voltage N-Channel MOSFET designed for robust power applications. Featuring a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 6.9A at 25°C (Tc), this component offers significant power handling capabilities with a maximum power dissipation of 35W (Tc). The device exhibits a low on-resistance of 940mOhm at 4A and 10V, coupled with a Gate Charge (Qg) of 29nC at 10V, indicating efficient switching performance. Input capacitance (Ciss) is rated at a maximum of 750pF at 30V. This MOSFET utilizes Metal Oxide technology and is housed in a TO-220F-3FS package, suitable for through-hole mounting. It operates across a wide temperature range up to 150°C (TJ) and supports a maximum Gate-Source Voltage (Vgs) of ±30V. The 2SK4099LS-1E is commonly employed in power supply units, lighting, and industrial motor control applications where high voltage blocking and efficient power conversion are critical.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.9A (Tc)
Rds On (Max) @ Id, Vgs940mOhm @ 4A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 30 V

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