2SK4099LS
MOSFET N-CH 600V 6.9A TO220FIManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK4099LS is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 6.9A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 940mOhm at 4A and 10V Vgs, it offers efficient switching performance. The device is housed in a TO-220FI(LS) through-hole package, facilitating easy board mounting. Key parameters include a gate charge (Qg) of 29 nC at 10V and input capacitance (Ciss) of 750 pF at 30V. Power dissipation capabilities are rated at 2W (Ta) and 35W (Tc). This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 940mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220FI(LS) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 30 V |
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