2SK4094-1E
MOSFET N-CH 60V 100A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK4094-1E is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) capability of 100 A at 25°C. The low on-resistance of 5 mOhm at 50 A and 10 V gate-source voltage, coupled with a gate charge (Qg) of 220 nC (max) at 10 V, ensures minimal conduction and switching losses. With a maximum power dissipation of 90 W at the case temperature, this MOSFET is suitable for demanding thermal environments. The TO-220-3 package facilitates through-hole mounting. This device is utilized in various industrial sectors, including power supplies, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12500 pF @ 20 V |
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