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2SK4089LS

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2SK4089LS

MOSFET N-CH 650V 8.5A TO220FI

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi 2SK4089LS is a high-voltage N-Channel Power MOSFET designed for demanding applications. This device features a maximum Drain-Source Voltage (Vdss) of 650V and a continuous Drain Current (Id) of 8.5A at 25°C (Tc). The onsemi 2SK4089LS offers a low on-state resistance (Rds On) of 720mOhm at 6A and 10V gate drive. With a maximum gate charge (Qg) of 45.4 nC at 10V and input capacitance (Ciss) of 1200 pF at 30V, it is suitable for various power switching applications. The component is housed in a TO-220FI(LS) through-hole package, enabling efficient heat dissipation with a power dissipation of 2W (Ta) and 40W (Tc). This MOSFET is commonly employed in power supply units, lighting, and industrial motor control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Rds On (Max) @ Id, Vgs720mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 30 V

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