2SK4066-E
MOSFET N-CH 60V 100A SMPManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel Power MOSFET, part number 2SK4066-E, offers a 60V drain-source breakdown voltage and a continuous drain current of 100A at 25°C ambient. This through-hole component features a low on-resistance of 4.7mOhm at 50A and 10V Vgs, with a gate charge of 220 nC. Designed for demanding applications, it exhibits a maximum junction temperature of 150°C and dissipates up to 1.65W (Ta) or 90W (Tc). Key parameters include input capacitance (Ciss) of 12500 pF at 20V and a maximum gate-source voltage (Vgs) of ±20V. The 2SK4066-E is suitable for power switching and motor control applications across various industrial sectors. It is supplied in a TO-220-3, Short Tab package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SMP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12500 pF @ 20 V |
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