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2SK4066-DL-E

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2SK4066-DL-E

MOSFET N-CH 60V 100A SMP-FD

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi's 2SK4066-DL-E is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-to-source voltage (Vdss) and supports a continuous drain current of 100A at 25°C (Ta). With a low on-resistance (Rds On) of 4.7mOhm at 50A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a maximum gate charge of 220 nC and an input capacitance of 12500 pF, facilitating efficient switching. Its SMP-FD package (TO-263-3, D2PAK) is suitable for surface mounting, and it can operate at junction temperatures up to 150°C. Power dissipation is rated at 1.65W (Ta) and 90W (Tc). This component finds utility in power supply, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Rds On (Max) @ Id, Vgs4.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)1.65W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageSMP-FD
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12500 pF @ 20 V

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