2SK4066-DL-1E
MOSFET N-CH 60V 100A TO263-2Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi 2SK4066-DL-1E is an N-Channel MOSFET designed for high-power switching applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current capability of 100A at ambient temperature. The on-resistance (Rds On) is rated at a maximum of 4.7mOhm at 50A and 10V gate-to-source voltage. With a gate charge (Qg) of 220 nC at 10V and input capacitance (Ciss) of 12500 pF at 20V, it offers efficient switching characteristics. The MOSFET is housed in a TO-263-2 (D2PAK) surface-mount package, supporting a maximum junction temperature of 150°C. It is supplied on tape and reel for automated assembly. This component is suitable for use in industrial power supplies, automotive electronics, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12500 pF @ 20 V |
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