2SK4066-1E
MOSFET N-CH 60V 100A TO262-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK4066-1E is an N-Channel MOSFET designed for high-power switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 100A at 25°C. It offers a low on-resistance (Rds On) of 4.7mOhm at 50A and 10V. The device supports gate drive voltages from 4V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Key parameters include a gate charge (Qg) of 220 nC and input capacitance (Ciss) of 12500 pF. Power dissipation is rated at 1.65W (Ta) and 90W (Tc). The 2SK4066-1E is housed in a TO-262-3 package suitable for through-hole mounting and operates at junction temperatures up to 150°C. This MOSFET is commonly utilized in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12500 pF @ 20 V |
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