2SK4065-E
MOSFET N-CH 75V 100A SMPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's 2SK4065-E is an N-Channel Power MOSFET designed for high-current applications. This through-hole component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 100A at 25°C (Ta). The device exhibits a low on-resistance of 6mOhm at 50A and 10V. Key parameters include a Gate Charge (Qg) of 220 nC at 10V and input capacitance (Ciss) of 12200 pF at 20V. Power dissipation is rated at 1.65W (Ta) and 90W (Tc). The operating junction temperature (TJ) reaches 150°C. This MOSFET is suitable for use in power supply units, automotive systems, and industrial motor control. It is supplied in a TO-220-3, Short Tab package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SMP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12200 pF @ 20 V |
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