2SK4065-DL-E
MOSFET N-CH 75V 100A SMP-FDManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's 2SK4065-DL-E is an N-Channel Power MOSFET designed with a 75 V drain-source voltage (Vdss). This device features a low on-resistance of 6 mOhm maximum at 50 A and 10 V Vgs, ensuring efficient power transfer. With a continuous drain current capability of 100 A at 25°C (Ta) and a maximum junction temperature of 150°C (TJ), it is suitable for demanding applications. The MOSFET utilizes a surface mountable SMP-FD (TO-263-3, D2PAK) package, facilitating high-density board designs. Key electrical parameters include a gate charge (Qg) of 220 nC maximum at 10 V and an input capacitance (Ciss) of 12200 pF maximum at 20 V Vds. The maximum gate-source voltage (Vgs) is ±20V. This component finds application in power supply units, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SMP-FD |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12200 pF @ 20 V |
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