2SK3978-TL-E
2SK3978 - N-CHANNEL SILICON MOSFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK3978-TL-E is an N-Channel Silicon MOSFET designed for demanding applications. This component features a Vdss rating of 200V and a continuous drain current (Id) of 4A at 25°C ambient. With a low Rds On of 550mOhm maximum at 2A and 10V, it ensures efficient power transfer. The device offers a maximum power dissipation of 1W (Ta) or 20W (Tc), supported by a 150°C operating temperature. Key electrical characteristics include a gate charge (Qg) of 21nC maximum at 10V and input capacitance (Ciss) of 950pF maximum at 20V. The 2SK3978-TL-E is housed in a TO-251-3 Short Leads, IPAK package (TP) for through-hole mounting. This MOSFET is widely utilized in power supply, industrial control, and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | TP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 20 V |
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