2SK3826
MOSFET N-CH 100V 26A TO220Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK3826 is an N-Channel Power MOSFET designed for demanding applications requiring high current handling and efficient switching. Featuring a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 26A at 25°C, this component is suitable for power supply units, motor control systems, and automotive electronics. Its TO-220 package facilitates through-hole mounting and offers robust thermal performance with a maximum power dissipation of 45W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 60mOhm at 13A and 10V, and a gate charge (Qg) of 42nC at 10V, ensuring efficient operation. The device operates across a wide temperature range up to 150°C (TJ) and supports gate-source voltages (Vgs) up to ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 20 V |