2SK3823
MOSFET N-CH 60V 40A TO220Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK3823 is an N-Channel Power MOSFET designed for robust performance in demanding applications. Featuring a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 40A at 25°C, this component offers significant power handling capabilities. Its low on-resistance (Rds On) of 27.5mOhm at 20A and 10V gate drive ensures efficient operation with minimal power loss. The device has a maximum power dissipation of 1.75W (Ta) and 45W (Tc), with an operating junction temperature of 150°C. Key parameters include a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 1780 pF at 20V. The 2SK3823 is housed in a standard TO-220-3 through-hole package, making it suitable for various industrial and automotive power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 27.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 20 V |