2SK3821-E
MOSFET N-CH 100V 40A SMPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK3821-E is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 40A at 25°C (Ta). With a maximum Rds On of 33mOhm at 20A and 10V, it offers efficient power handling. The device supports drive voltages from 4V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Key parameters include a gate charge (Qg) of 73 nC and input capacitance (Ciss) of 4200 pF. Power dissipation is rated at 1.65W (Ta) and 65W (Tc). This MOSFET is suitable for use in industrial power supplies, automotive systems, and consumer electronics. The component is packaged in a TO-220-3, Short Tab configuration and supplied in Bulk.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SMP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 20 V |
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