2SK3821-DL-E
MOSFET N-CH 100V 40A SMP-FDManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi 2SK3821-DL-E is an N-Channel Power MOSFET designed for demanding applications. Featuring a Vdss rating of 100V and a continuous drain current capability of 40A at 25°C (Ta), this component offers robust performance. Its low on-resistance of 33mOhm maximum at 20A and 10V gate drive ensures efficient power transfer. The device boasts a gate charge of 73nC maximum at 10V and an input capacitance of 4200pF maximum at 20V, critical parameters for switching speed optimization.
With a maximum power dissipation of 1.65W (Ta) and 65W (Tc), the 2SK3821-DL-E is suitable for high-power density designs. It operates across a temperature range of -55°C to 150°C (TJ) and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, also known as SMP-FD. This MOSFET is commonly employed in industrial, automotive, and power supply applications where reliable switching and power handling are paramount. The drive voltage range is specified from 4V to 10V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SMP-FD |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 20 V |