2SK3820-DL-E
MOSFET N-CH 100V 26A SMP-FDManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK3820-DL-E is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 26A at 25°C ambient. With a low on-resistance (Rds On) of 60mOhm at 13A and 10V Vgs, it offers efficient power handling. The device supports gate drive voltages from 4V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Key parameters include a maximum gate charge (Qg) of 44 nC at 10V and input capacitance (Ciss) of 2150 pF at 20V Vds. The 2SK3820-DL-E is packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface mount configuration, suitable for high-power density designs. It operates at junction temperatures up to 150°C, with power dissipation rated at 1.65W (Ta) and 50W (Tc). This MOSFET is widely utilized in industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SMP-FD |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 20 V |